Issue 112, 2016, Issue in Progress

Sn doping induced intermediate band in CuGaS2

Abstract

Sn doped CuGaS2 has been investigated as an intermediate band (IB) material. Our results indicate that Sn doping can indeed induce IBs in the band gap of CuGaS2 and the optical absorption and solar energy utilization are greatly enhanced due to the existence of the IBs. Though all Sn doped structures concerned are dynamically stable, we found that under thermal equilibrium growth conditions, the CuGaS2 should be moderately doped to maintain its stability over a chemical potential region in order to achieve novel optoelectronic IB materials growth.

Graphical abstract: Sn doping induced intermediate band in CuGaS2

Article information

Article type
Paper
Submitted
30 Jun 2016
Accepted
31 Oct 2016
First published
09 Nov 2016

RSC Adv., 2016,6, 110511-110516

Sn doping induced intermediate band in CuGaS2

M. M. Han, X. L. Zhang and Z. Zeng, RSC Adv., 2016, 6, 110511 DOI: 10.1039/C6RA16855H

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