Evidence of band bending induced by hole trapping at MAPbI3 perovskite/metal interface

Abstract

Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI₃ has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI₃ interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.