Issue 20, 2018

Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates

Abstract

The crystallinity of one n-GaN (Si-doped) and two p-GaN (Mg-doped) homoepitaxial thin films selectively grown on GaN substrates was evaluated by using synchrotron X-ray diffraction. A reflection-mode monochromatic X-ray topography image from the n-GaN homoepitaxial thin film shows a mesh-shape structure that is similar to that of the selective-growth GaN substrate. Moreover, transmission-mode white-beam X-ray topography images from the GaN substrate and the n-GaN homoepitaxial thin film show similar regular dot-shape diffraction patterns. This suggests that, following hydride vapor phase epitaxy, the structural characteristics of the selectively grown GaN substrates inherited from their corresponding foreign substrates (dot-patterned sapphire) were inherited by the subsequent n-GaN homoepitaxial thin film, although the crystal quality of the homoepitaxial thin film had been deteriorated. White-beam topography images from two p-GaN homoepitaxial thin films grown on the same GaN substrate wafer and cut from adjacent areas indicate that the p-GaN thin films were non-uniform.

Graphical abstract: Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates

Supplementary files

Article information

Article type
Paper
Submitted
11 Feb 2018
Accepted
23 Apr 2018
First published
03 May 2018
This article is Open Access
Creative Commons BY-NC license

CrystEngComm, 2018,20, 2861-2867

Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates

Y. Lou, C. Song, Y. Chen, L. S. R. Kumara, N. Palina, O. Seo, S. Hiroi, K. Kajiwara, M. Hoshino, K. Uesugi, Y. Irokawa, T. Nabatame, Y. Koide and O. Sakata, CrystEngComm, 2018, 20, 2861 DOI: 10.1039/C8CE00229K

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