Broad spectral response of an individual tellurium nanobelt grown by molecular beam epitaxy

Abstract

The detection of broad wavelengths from the near-ultraviolet to near-infrared regime using functional semiconductor nanostructures is of great importance in either fundamental research or technological application. In this work, we report high-performance optoelectronic nanodevices based on a single Te nanobelt grown by molecular beam epitaxy. The photodetector demonstrates a fast photoresponse time (a rise time of 510 μs and a decay time of 300 μs), a high photoresponsivity of 254.2 A W⁻¹, an external quantum efficiency of 8.6 × 10⁴%, a large detectivity of 8.3 × 10⁸ Jones, on/off ratio of 3 orders, broadband response from the near-ultraviolet to near-infrared region, and robust photocurrent stability and reproducibility. The photodetector with superior performances based on the individual one-dimensional Te nanobelt consequently shows great promise for further optoelectronic device applications.