Issue 1, 2019, Issue in Progress

Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Abstract

An indium tungsten oxide (IWO) ultraviolet (UV) photodetector was fabricated with radio frequency magnetron sputtering. IWO thin films were deposited on devices under various oxygen partial pressure ambiences. With higher oxygen flow ratio, the oxygen vacancies were filled up, reducing the carrier concentration. Lowering the number of defects, such as oxygen vacancies, was effective for optimizing device performance. The on–off current ratio of an IWO UV-A photodetector at 10% oxygen partial pressure could reach 4.56 × 104, with a photoresponsivity of 1.9 × 10−2 A W−1, as well as a rejection ratio of 2.68 × 104 at a voltage bias of 10 V.

Graphical abstract: Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

Article information

Article type
Paper
Submitted
24 Oct 2018
Accepted
10 Dec 2018
First published
20 Dec 2018
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2019,9, 87-90

Effect of oxygen vacancy concentration on indium tungsten oxide UV-A photodetector

K. Chen, S. Chang and C. Lin, RSC Adv., 2019, 9, 87 DOI: 10.1039/C8RA08803A

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