Issue 10, 2019

Nitrogen-doped graphene quantum dots for 80% photoluminescence quantum yield for inorganic γ-CsPbI3 perovskite solar cells with efficiency beyond 16%

Abstract

The insufficient utilization of sunlight has been a big obstacle preventing inorganic perovskite solar cells (PSCs) from achieving high power conversion efficiency (PCE). Herein, nitrogen-doped graphene quantum dots (N-GQDs) are developed to achieve a photoluminescence quantum yield (PLQY) as high as 80% to effectively convert harmful UV light into useful visible photons for improved solar cell efficiency. It is found that the N-GQD material is very stable against humidity and under high temperature stress. When it is deposited on the top of the γ-CsPbI3 PSCs, it serves as an energy-down-shift (EDS) layer to harvest light in the short wavelength range <350 nm that is normally detrimental to the perovskite. Compared with the reference cell without the N-GQDs, the optimized PSC exhibits an increased short circuit current density (JSC) of 19.15 mA cm−2 from 18.67 mA cm−2 and a PCE of 16.02% from 15.53%. Further examination of the EQE, PL and UV-vis absorption spectra confirms that the improvement in the device performance does indeed result from the N-GQDs. The present strategy paves the way for rational design to improve the performance of other novel photovoltaic devices.

Graphical abstract: Nitrogen-doped graphene quantum dots for 80% photoluminescence quantum yield for inorganic γ-CsPbI3 perovskite solar cells with efficiency beyond 16%

Supplementary files

Article information

Article type
Paper
Submitted
29 Dec 2018
Accepted
10 Feb 2019
First published
12 Feb 2019

J. Mater. Chem. A, 2019,7, 5740-5747

Nitrogen-doped graphene quantum dots for 80% photoluminescence quantum yield for inorganic γ-CsPbI3 perovskite solar cells with efficiency beyond 16%

H. Bian, Q. Wang, S. Yang, C. Yan, H. Wang, L. Liang, Z. Jin, G. Wang and S. (. Liu, J. Mater. Chem. A, 2019, 7, 5740 DOI: 10.1039/C8TA12519H

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