Issue 12, 2019

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

Abstract

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations. We predict that MX2 sheets possess narrow direct band gaps of about 0.3–0.8 eV and ultrahigh mobilities both for holes and electrons. The hole mobility of PdAs2 is even up to 50 × 104 cm2 V−1 s−1 and the electron mobility of PtAs2 is up to 25 × 104 cm2 V−1 s−1. Besides fascinating electronic properties, 2D MX2 also exhibits optical absorption over the entire visible-light range. Additionally, like graphene and carbon nanotubes, a MX2 sheet can be rolled into various forms of MX2 nanotubes as well. Interestingly, NiP2 nanotubes exhibit rich band gap behaviour which can be adjusted by the roll-up vector. With a desired band gap, high carrier mobility and optical properties, 2D MX2 sheets promise to be potential candidates for electronic devices.

Graphical abstract: Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

Supplementary files

Article information

Article type
Paper
Submitted
30 Nov 2018
Accepted
21 Feb 2019
First published
21 Feb 2019

J. Mater. Chem. C, 2019,7, 3569-3575

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

S. Qian, X. Sheng, X. Xu, Y. Wu, N. Lu, Z. Qin, J. Wang, C. Zhang, E. Feng, W. Huang and Y. Zhou, J. Mater. Chem. C, 2019, 7, 3569 DOI: 10.1039/C8TC06030D

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