Issue 18, 2019

Halide perovskites for resistive random-access memories

Abstract

Halide perovskite based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because their switching material—halide perovskite—has received considerable attention in recent years. Among the electrical characteristics of the material, its current–voltage (IV) hysteresis, which may occur due to defect formation and migration, means that ReRAM can employ halide perovskites as a resistive switching material. Many studies have been conducted on resistive switching materials; however, the investigation of halide perovskites for ReRAM devices is still in the early research stages; therefore, the application of halide perovskites in ReRAM devices is a topic worth studying. Herein, we introduce halide perovskites and their operating mechanism within a ReRAM device. Moreover, recent notable achievements along with future challenges have been reviewed.

Graphical abstract: Halide perovskites for resistive random-access memories

Article information

Article type
Highlight
Submitted
30 Nov 2018
Accepted
07 Jan 2019
First published
08 Jan 2019

J. Mater. Chem. C, 2019,7, 5226-5234

Halide perovskites for resistive random-access memories

H. Kim, J. S. Han, S. G. Kim, S. Y. Kim and H. W. Jang, J. Mater. Chem. C, 2019, 7, 5226 DOI: 10.1039/C8TC06031B

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