Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture

Guangdong Zhou; Bai Sun; Zhijun Ren; Lidan Wang; Cunyun Xu; Bo Wu; Ping Li; Yanqing Yao; Shukai Duan

doi:10.1039/C9CC04069B

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Resistive switching behaviors and memory logic functions in single MnO_x nanorod modulated by moisture†

Guangdong Zhou,

‡*^ab Bai Sun,

‡^c Zhijun Ren,‡^a Lidan Wang,‡^c Cunyun Xu,^b Bo Wu,^d Ping Li,^d Yanqing Yao^b and Shukai Duan

*^b

Author affiliations

* Corresponding authors

^a School of Science, Guizhou institute of Technology, Guiyang 55003, China

^b School of Artificial Intelligence, Southwest University, Chongqing 400715, China
E-mail: zhougd@swu.edu.cn, duansk@swu.edu.cn

^c School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, Sichuan 610031, China

^d School of Physics and Electronic Science, Zunyi Normal College, China

Abstract

A device with the lateral structure of Ag|MnO_x|Ag was developed using a single MnO_x nanorod. The device showed a typical resistor property under dry ambience, while it demonstrated the reversion between resistor and memristor under moisture ambience. Memory logic functions including logic gates and displays were feasible under the dual input of electric and moisture signals.

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Article information

DOI: https://doi.org/10.1039/C9CC04069B
Article type: Communication
Submitted: 26 May 2019
Accepted: 09 Jul 2019
First published: 09 Jul 2019

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Chem. Commun., 2019,55, 9915-9918

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Resistive switching behaviors and memory logic functions in single MnO_x nanorod modulated by moisture

G. Zhou, B. Sun, Z. Ren, L. Wang, C. Xu, B. Wu, P. Li, Y. Yao and S. Duan, Chem. Commun., 2019, 55, 9915 DOI: 10.1039/C9CC04069B

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Chemical Communications