Issue 20, 2019

InSe: a two-dimensional semiconductor with superior flexibility

Abstract

Two-dimensional indium selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (∼1–2 layers to ∼34 layers) flakes experimentally by using a buckling-based methodology. We find that the Young's modulus has a value of 23.1 ± 5.2 GPa, one of the lowest values reported to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.

Graphical abstract: InSe: a two-dimensional semiconductor with superior flexibility

Supplementary files

Article information

Article type
Communication
Submitted
12 Mar 2019
Accepted
27 Apr 2019
First published
29 Apr 2019
This article is Open Access
Creative Commons BY license

Nanoscale, 2019,11, 9845-9850

InSe: a two-dimensional semiconductor with superior flexibility

Q. Zhao, R. Frisenda, T. Wang and A. Castellanos-Gomez, Nanoscale, 2019, 11, 9845 DOI: 10.1039/C9NR02172H

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