Barrier-assisted vapor phase CVD of large-area MoS2 monolayers with high spatial homogeneity

Abstract

Atomically thin molybdenum disulphide (MoS₂) is a direct band gap semiconductor with negatively charged trions and stable excitons in striking contrast to the wonder material graphene. While large-area growth of MoS₂ can be readily achieved by gas-phase chemical vapor deposition (CVD), growth of continuous MoS₂ atomic layers with good homogeneity is indeed one of the major challenges in vapor-phase CVD involving all-solid precursors. In this study, we demonstrate the growth of large-area continuous single crystal MoS₂ monolayers on c-plane sapphire by carefully positioning the substrate using a facile staircase-like barrier. The barrier offered great control in mitigating the secondary and intermediate phases as well as second layer nucleation, and eventually a continuous monolayer with high surface homogeneity is realized. Both micro-Raman and high-resolution transmission electron microscopy (HRTEM) results confirmed the high structural quality of the grown MoS₂ layers. Using low temperature photoluminescence spectroscopy, additional pieces of information are provided for the strong band-edge emission in the light of vacancy compensation and formation of Mo–O bonding. The monolayer MoS₂ transferred to SiO₂/Si exhibited a room temperature field-effect mobility of ∼1.2 cm² V⁻¹ s⁻¹ in a back-gated two-terminal configuration.