Issue 40, 2008

Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

Abstract

An atomic layer epitaxy technique was used to produce nanoscale 2.9–3.4 nm copper particles supported on silica, and the nanoscale Cu/SiO2catalysts can show surprisingly high activity for the water gas shift reaction, in comparison with the 5.6 wt% Pt/SiO2 and 10.3 wt% Cu/SiO2 prepared by the impregnation method.

Graphical abstract: Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

Additions and corrections

Article information

Article type
Communication
Submitted
01 May 2008
Accepted
31 Jul 2008
First published
09 Sep 2008

Chem. Commun., 2008, 4983-4985

Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

C. Chen, J. Lin and T. Lai, Chem. Commun., 2008, 4983 DOI: 10.1039/B807428C

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