Issue 69, 2017, Issue in Progress

Fabrication of rGO/g-C3N4 composites via electrostatic assembly towards charge separation control

Abstract

Herein, g-C3N4 nanosheets (NSs) were grown on reduced graphene oxide (rGO) using cross linking molecules by an electrostatic assembly process from carboxyl and amine groups via π–π stacking interaction to fabricate heterostructures. Detailed characterizations such as Fourier transform infrared spectroscopy, transmission electron microscopy, scanning electronmicroscopy, photoelectrochemical measurements, X-ray photoelectron spectroscopy, and photoluminescence (PL) spectroscopy demonstrated step-by-step immobilization of 1-pyrene carboxylic acid, polyaniline (PANI), and g-C3N4 on rGO. The π–π stacking plays an important role for the formation of rGO/g-C3N4 composites. The surface of rGO was homogeneously decorated with monodispersed g-C3N4 NSs. The resulting rGO/g-C3N4 composites obtained endowed the heterostructures with novel functions. Both the rGO–COOH/g-C3N4 and rGO–PANI/g-C3N4 composites revealed enhanced conduction properties. Absorption and PL spectra of the composite samples confirmed the attachment of g-C3N4 on rGO. Due to the presence of carboxyl groups on 1-pyrene carboxylic acid, rGO–COOH/g-C3N4 composites demonstrated enhanced photocatalysis properties.

Graphical abstract: Fabrication of rGO/g-C3N4 composites via electrostatic assembly towards charge separation control

Article information

Article type
Paper
Submitted
13 Jul 2017
Accepted
25 Aug 2017
First published
11 Sep 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 43888-43893

Fabrication of rGO/g-C3N4 composites via electrostatic assembly towards charge separation control

X. Zhang, C. Jia, Y. Xue and P. Yang, RSC Adv., 2017, 7, 43888 DOI: 10.1039/C7RA07706H

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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