A fast GGAG:Ce(Mg) single crystal scintillator: LDFZM growth, characterization and electronic band structure calculation

František Zajíc; Vítězslav Jarý; Jiří Pospíšil; Pavel Boháček; Zafari Umar; Michal Piasecki; Mikhail G. Brik; Romana Kučerková; Alena Beitlerová; Martin Nikl

doi:10.1039/D4MA00976B

A fast GGAG:Ce(Mg) single crystal scintillator: LDFZM growth, characterization and electronic band structure calculation†

František Zajíc,

*^ab Vítězslav Jarý,

^b Jiří Pospíšil,

^a Pavel Boháček,

^c Zafari Umar,^de Michal Piasecki,

^d Mikhail G. Brik,

^fghi Romana Kučerková,

^b Alena Beitlerová

^b and Martin Nikl

*^b

Author affiliations

* Corresponding authors

^a Charles University, Faculty of Mathematics and Physics, Ke Karlovu 5, 121 16 Prague 2, Czech Republic
E-mail: zajicf@fzu.cz

^b Institute of Physics of the Czech Academy of Sciences, Cukrovarnická 10, 162 53 Prague, Czech Republic
E-mail: nikl@fzu.cz

^c Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, Prague 8, Czech Republic

^d Faculty of Science and Technology, Jan Długosz University, Armii Krajowej 13/15, Czestochowa, Poland

^e Center of Innovative Development of Science and New Technologies, National Academy of Sciences of Tajikistan, Dushanbe, Tajikistan

^f School of Optoelectronics & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing, China

^g Center of Excellence for Photoconversion, Vinča Institute of Nuclear Sciences – National Institute of the Republic of Serbia, University of Belgrade, Belgrade, Serbia

^h Institute of Physics, University of Tartu, W. Ostwald Str. 1, Tartu, Estonia

ⁱ Academy of Romanian Scientists, Ilfov Str. No. 3, Bucharest, Romania

Abstract

The growth of Gd₃Ga_2.7Al_2.3O₁₂:Ce and Gd₃Ga_2.7Al_2.3O₁₂:Ce,Mg crystals was accomplished by the laser-diode floating zone method (LDFZM) under a pressurized oxygen atmosphere. Optical, luminescence, and scintillation characterization were performed, which points to their comparable scintillation performance and lower charge trapping in the scintillation mechanism compared to commercial GAGG:Ce crystals grown by the Czochralski method. Theoretical electronic band structure calculations were performed for Gd₃Ga_2.7Al_2.3O₁₂, Gd₃Ga₅O₁₂ and Gd₃Al₅O₁₂ compositions and these are discussed in the light of the experimental results obtained.

Materials Advances

A fast GGAG:Ce(Mg) single crystal scintillator: LDFZM growth, characterization and electronic band structure calculation†

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A fast GGAG:Ce(Mg) single crystal scintillator: LDFZM growth, characterization and electronic band structure calculation

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