Issue 23, 2024

Zero-dimensional cuprous halide scintillator with ultra-high anti-water stability for X-ray imaging

Abstract

Zero-dimensional (0D) cuprous organic–inorganic hybrid halides have emerged as a new kind of scintillator due to their high light yield and adjustable emission properties in the whole visible spectral range. However, their practical application in the radiation industry is seriously hindered by the instability of CuI ions under humid atmospheres and oxidizing environments. Herein, we designed a new Cu(I)-based halide of [CEOMTPP]2Cu4Br6 (CEOMTPP = ethoxycarbonylmethyl(triphenyl) phosphonium cation) containing a discrete [Cu4Br6]2− nanocluster, which displays strong broadband yellow light emission with near-unity photoluminescence quantum yield (PLQY) and large Stokes shift of 206 nm. Remarkably, [CEOMTPP]2Cu4Br6 shows ultra-high anti-water and anti-oxidation stability with steady emitting performance in water for over one year and in an acid–base aqueous solution for one day. Benefiting from the near-unity PLQY, large Stokes shift and negligible self-absorption, [CEOMTPP]2Cu4Br6 exhibits excellent scintillation properties with a high light yield of 69 500 phonon per meV and low detection limit of 113.0 nGy s−1. Furthermore, a high spatial resolution of 14.5 lp mm−1 is achieved in X-ray imaging based on a [CEOMTPP]2Cu4Br6@EVA composite-assembled scintillation screen, demonstrating its potential application in medical photography. This research provides a fundamental structural engineering strategy to design highly efficient and stable low-dimensional Cu(I) halides for X-ray radiation application.

Graphical abstract: Zero-dimensional cuprous halide scintillator with ultra-high anti-water stability for X-ray imaging

Supplementary files

Article information

Article type
Research Article
Submitted
23 Aug 2024
Accepted
13 Oct 2024
First published
01 Nov 2024

Inorg. Chem. Front., 2024,11, 8555-8563

Zero-dimensional cuprous halide scintillator with ultra-high anti-water stability for X-ray imaging

J. Lv, N. Lin, J. Zhang, Y. Liu, L. Niu, J. Shi, X. Lei and Z. Chen, Inorg. Chem. Front., 2024, 11, 8555 DOI: 10.1039/D4QI02149E

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