MOCVD growth of boron nitride films from single source III–V precursor

Abstract

The sp² and sp³ phases of boron nitride (BN) have been deposited on Si and Ni substrates by low pressure MO-CVD (metal organic chemical vapour deposition) at 450 °C from diethylaminoborane and the films were characterised by Fourier transform infrared (FTIR) and X-ray diffraction (XRD); a plausible mechanism of CVD is proposed from gas-phase decomposition studies, and to our knowledge this is the first report of the growth of BN by MO-CVD using a single source.